? ? ? ? guilin strong micro-electronics co.,ltd. gm c 1623 ( ? 2sc1623) features c npn general purpose transistor maximum ratings ~? characteristic ? symbol ? rating ~? unit collector-emitter voltage ?O - lO? v ceo 50 vdc collector-base voltage ?O - O? v cbo 60 vdc emitter-base voltage lO - O? v ebo 5.0 vdc collector current continuous ?O - Bm ic 100 madc thermal characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 h?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ total device dissipation ? alumina substrate Xr ,(2)t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg -55to+150
? ? ? ? guilin strong micro-electronics co.,ltd. gm c 1623 ( ? 2sc1623) device marking gm c 1623 (2sc1623) =l4-l7 h fe :90-180=l4; 135-270=l5; 200-400=l6; 3 00- 6 00=l7 electrical characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? typ e ? ma x ? unit off characteristics ? emitter cutoff current lO? (v eb =5.0v,i c =0) i ebo 0.1 a collector cutoff current ?O? (v cb =60v,i e =0) i cbo 0.1 a collector to emitter saturation voltage ?O?? (ic=100madc,i b =10ma) v ce(sat) 0.15 0.3 vdc base to emitter saturation voltage O?? (ic=100madc,i b =10ma) v b e(sat) 1.0 vdc base to emitter voltage O - lO? (v ce =6.0v,i c =1.0ma) v be 0.55 0.62 0.65 vdc dc current gain ? (v ce =6.0v,i c =1.0ma) h fe 90 200 6 00 gain bandwidth product ?e (v ce =6.0v,i c =1.0ma) f t 250 mhz output capacitance ? (v cb =6v,i e =0,f=1.0mhz) c ob 3.0 pf 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina.
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